Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications (2024)

Kumar, N., Dixit, A., Rezaei, A., Dutta, T., García, C. P., & Georgiev, V. (2023). Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 (pp. 617-620). (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). IEEE. https://doi.org/10.1109/NMDC57951.2023.10343913

Kumar, Naveen ; Dixit, Ankit ; Rezaei, Ali et al. / Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. IEEE, 2023. pp. 617-620 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

@inproceedings{578605bf15d545cd86b228ffcdc03aff,

title = "Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications",

abstract = "Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.",

author = "Naveen Kumar and Ankit Dixit and Ali Rezaei and Tapas Dutta and Garc{\'i}a, {C{\'e}sar Pascual} and Vihar Georgiev",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 ; Conference date: 22-10-2023 Through 25-10-2023",

year = "2023",

month = dec,

day = "12",

doi = "10.1109/NMDC57951.2023.10343913",

language = "English",

series = "2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023",

publisher = "IEEE",

pages = "617--620",

booktitle = "2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023",

}

Kumar, N, Dixit, A, Rezaei, A, Dutta, T, García, CP & Georgiev, V 2023, Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. in 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, IEEE, pp. 617-620, 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Paestum, Italy, 22/10/23. https://doi.org/10.1109/NMDC57951.2023.10343913

Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. / Kumar, Naveen; Dixit, Ankit; Rezaei, Ali et al.
2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. IEEE, 2023. p. 617-620 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications

AU - Kumar, Naveen

AU - Dixit, Ankit

AU - Rezaei, Ali

AU - Dutta, Tapas

AU - García, César Pascual

AU - Georgiev, Vihar

N1 - Publisher Copyright:© 2023 IEEE.

PY - 2023/12/12

Y1 - 2023/12/12

N2 - Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.

AB - Ultra-steep subthreshold slope FBFETs are promising candidates for next-generation memory and sensing devices. The characteristic of Subthreshold slope less than 10mV/dec enables efficient memory cell design and reduces power consumption during OFF-states, making FBFETs ideal for memory and sensing applications. In this paper, we demonstrate the use of FBFETs for both memory and sensing applications. For sensing, we have used Gouy-Chapman-Stern and site-binding model to calculate the surface potential on the sensing surface of the proposed device due to the protonation and deprotonations based on the pH of the electrolyte. For memory, we will target the memory window due to trapped charges or a single polyoxometalate cluster. We will show that the FBFETs can achieve a larger memory window and a sensing sensitivity crossing the Nernst limit. These results will demonstrate the potential of FBFETs for a wide range of applications.

U2 - 10.1109/NMDC57951.2023.10343913

DO - 10.1109/NMDC57951.2023.10343913

M3 - Conference contribution

AN - SCOPUS:85182031423

T3 - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

SP - 617

EP - 620

BT - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

PB - IEEE

T2 - 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Y2 - 22 October 2023 through 25 October 2023

ER -

Kumar N, Dixit A, Rezaei A, Dutta T, García CP, Georgiev V. Insights into the Ultra-Steep Subthreshold Slope Gate-all-around Feedback-FET for memory and sensing applications. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. IEEE. 2023. p. 617-620. (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). doi: 10.1109/NMDC57951.2023.10343913